| Price | RM365.00 RM399.00 RM |
| Product SKU | RAM-8GB-KINGSTON-1866-SODIMM-HX318LS11IB/8 |
| Brand | Kingston |
| Size (L x W x H) | 5.8 cm x 2 cm x 17 cm |
| Availability | Out Of Stock |
- JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) Power Supply
- VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
- 933MHz fCK for 1866Mb/sec/pin • 8 independent internal bank
- Programmable CAS Latency: 13, 11, 10, 9, 8, 7, 6, 5
- Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
- 8-bit pre-fetch
- Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
- Bi-directional Differential Data Strobe • Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
- On Die Termination using ODT pin
- Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
- Asynchronous Reset
- PCB : Height 1.180” (30.00mm), double sided component
HyperX HX318LS11IB/8 is a 1G x 64-bit (8GB) DDR3L-1866 CL11 SDRAM (Synchronous DRAM) 2Rx8, low voltage, memory modules, based on sixteen 512M x 8-bit DDR3 FBGA components. This module has been tested to run at DDR3L-1866 at a low latency timing of 11-11-11 at 1.35V or 1.5V. Additional timing parameters are shown in the PnP Timing Parameters section below. The JEDEC standard electrical and mechanical specifications are as follows:
SPECIFICATIONS
| CL(IDD) | 11 cycles |
| Row Cycle Time (tRCmin) | 44.7ns (min.) |
| Refresh to Active/Refresh Command Time (tRFCmin) | 260ns (min.) |
| Row Active Time (tRASmin) | 34ns (min.) |
| Maximum Operating Power | TBD W* @1.35V |
| UL Rating | 94 V - 0 |
| Operating Temperature | 0o C to 85o C |
| Storage Temperature | -55o C to +100o C |
*Power will vary depending on the SDRAM used.
PnP JEDEC TIMING PARAMETERS:
• DDR3-1866 CL11-11-11 @1.35V or 1.5V
• DDR3-1600 CL10-10-10 @1.35V or 1.5V
• DDR3-1333 CL8-8-8 @1.35V or 1.5V
FEATURES
- JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) Power Supply
- VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
- 933MHz fCK for 1866Mb/sec/pin • 8 independent internal bank
- Programmable CAS Latency: 13, 11, 10, 9, 8, 7, 6, 5
- Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
- 8-bit pre-fetch
- Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
- Bi-directional Differential Data Strobe • Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
- On Die Termination using ODT pin
- Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
- Asynchronous Reset
- PCB : Height 1.180” (30.00mm), double sided component
1 x Kingston HyperX Impact 8GB 1866MHz DDR3L 1866 204 Pin SODIMM Notebook Gaming Ram HX318LS11IB/8
original sony laptop, delivery was relatively quick. strong recommend to buy.
safely received, no broken part even with bubble wrap around the item. thx for selling.
商品和描述的一致。包装很好。 配合卖家提供的优惠价卷，价格变得更优惠。
fast delivery, good services and prompt reply!